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| J304/305 N-Channel JFETs Product Summary Part Number J304 J305 VGS(off) (V) -2 to -6 -0.5 to -3 V(BR)GSS Min (V) -30 -30 gfs Min (mS) 4.5 3 IDSS Min (mA) 5 1 Features D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz D Very Low Noise: 3.8 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA Benefits D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification Applications D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches Description The J304/305 n-channel JFETs provide high-performance amplification, especially at high-frequency. These products are available in tape and reel for automated assembly (see Package Information). For similar products in TO-236 (SOT-23) packages, see the 2N/SST5484 series data sheet, or in TO-206AF (TO-72) packages, see the 2N/SST4416 series data sheet. TO-226AA (TO-92) S 1 D 2 G 3 Top View Absolute Maximum Ratings Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -30 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70236. Siliconix P-37404--Rev. C, 04-Jul-94 1 J304/305 Specificationsa Limits J304 J305 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentc Symbol Test Conditions IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = -6 V VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F) -35 -30 -2 5 -6 15 -100 -30 -0.5 1 -3 8 -100 V mA pA nA pA W V -2 -0.2 -20 2 200 0.7 Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltage gfs VDS = 15 V, VGS = 0 V, f = 1 kHz V V gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 2.2 0.7 1 10 nV Hz pF 50 50 mS 4.5 7.5 3 mS Typical High-Frequency Specificationsa Limits (Typ) J304 J305 Parameter High-Frequency Common-Source Input Conductance Common-Source Input Susceptance Common-Source Output Conductance Common-Source Output Susceptance Common-Source Forward Transconductance Common-Source Power Gain Noise Figure Symbol Test Conditions 100 MHz 400 MHz 100 MHz 400 MHz Unit mS mS mS mS dB giss biss goss boss gfs Gps NF VDS = 15 V, ID = 5 mA RG = 1 kW VDS = 15 V, VGS = 0 V 80 2 60 0.8 4.4 20 1.7 800 7.5 80 3.6 4.2 11 3.8 80 2 60 0.8 3 Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms, duty cycle v2%. NH 2 Siliconix P-37404--Rev. C, 04-Jul-94 J304/305 Typical Characteristics 20 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 rDS(on) - Drain-Source On-Resistance ( W ) g fs - Forward Transconductance (mS) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 50 g os - Output Conductance ( mS) 16 IDSS 8 400 40 12 gfs 6 300 rDS gos 30 8 4 200 20 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 -10 2 100 10 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Gate Leakage Current 100 nA 10 nA 1 mA I G - Gate Leakage 1 nA 100 pA 5 mA 10 pA 1 pA 0.1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) TA = 25_C 1 mA 0.1 mA IGSS @ 25_C TA = 125_C 0.1 mA g fs - Forward Transconductance (mS) 5 mA 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 8 TA = -55_C 6 25_C IGSS @ 125_C 4 125_C 2 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V -1.0 V -1.2 V -1.4 V 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) I D - Drain Current (mA) 12 15 Output Characteristics VGS(off) = -3 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V 2 0 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) Siliconix P-37404--Rev. C, 04-Jul-94 3 J304/305 Typical Characteristics (Cont'd) Transfer Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) I D - Drain Current (mA) TA = -55_C 6 125_C 25_C VDS = 10 V 8 TA = -55_C 6 25_C 125_C 10 VGS(off) = -3 V VDS = 10 V Transfer Characteristics 4 4 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10 VGS(off) = -2 V g fs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C 125_C g fs - Forward Transconductance (mS) VDS = 10 V f = 1 kHz 10 Transconductance vs. Gate-Source Voltgage VGS(off) = -3 V 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz 4 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) - Drain-Source On-Resistance ( W ) TA = 25_C 240 VGS(off) = -2 V 180 VGS(off) = -3 V A V - Voltage Gain 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 10 V RL + I D 60 120 40 VGS(off) = -2 V 60 20 VGS(off) = -3 V 0 0.1 0 1 ID - Drain Current (mA) 10 0.1 1 ID - Drain Current (mA) 10 4 Siliconix P-37404--Rev. C, 04-Jul-94 J304/305 Typical Characteristics (Cont'd) 5 Common-Source Input Capacitance vs. Gate-Source Voltage f = 1 MHz C rss - Reverse Feedback Capacitance (pF) 3 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 4 2.4 3 VDS = 0 V 1.8 VDS = 0 V 2 1.2 1 VDS = 10 V 0.6 VDS = 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 100 Input Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 gis 10 (mS) (mS) gfs 1 1 -bfs 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 1 (mS) (mS) -brs 10 Output Admittance bos 1 gos -grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 500 1000 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Siliconix P-37404--Rev. C, 04-Jul-94 5 J304/305 Typical Characteristics (Cont'd) 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 20 Output Conductance vs. Drain Current VGS(off) = -3 V (nV / Hz) g os - Output Conductance ( mS) 16 16 TA = -55_C 12 25_C 125_C 4 VDS = 10 V f = 1 kHz 0 12 e n - Noise Voltage 8 ID = 5 mA VGS = 0 V 0 10 100 1k f - Frequency (Hz) 10 k 100 k 8 4 0.1 1 ID - Drain Current (mA) 10 6 Siliconix P-37404--Rev. C, 04-Jul-94 |
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